1.Hang Chen , Shuhui Zhang , Tianpeng Yang , Tingting Mi , Xiaowen Wang and Chao Liu*. 1 kV vertical P-i-N diodes based on ultra-wide bandgap Al0.47Ga0.53N grown by MOCVD. IEEE Electron Device Letters, 2024.
2.Hang Chen, Shuhui Zhang, Tianpeng Yang, Tingting Mi, Xiaowen Wang and Chao Liu*. Vertical ultra-wide bandgap Al0.5Ga0.5N P-N memory diodes. IEEE Electron Device Letters, 2025.
3.Hang Chen , Shuhui Zhang , Tianpeng Yang , Tingting Mi , Xiaowen Wang and Chao Liu*. 650 V vertical Al0.51Ga0.49N power Schottky diodes. Applied Physics Letters, 2024
4.Hang Chen , Shuhui Zhang , Tianpeng Yang , Tingting Mi , Xiaowen Wang and Chao Liu*. MOCVD growth and fabrication of vertical P-i-N and Schottky power diodes based on ultra-wide bandgap AlGaN epitaxial structures. International Symposium on Power Semiconductor Devices and ICs（ISPSD), Bremen, Germany, June 2-6, 2024.
5.Hang Chen , Sihao Chen , Heng Wang , Man Hoi Wong and Chao Liu*. Design strategy of vertical GaN power SBDs with p-GaN JTE and experimental demonstration of selective p-doping by implantation. Physica Status Solidi A: Applications and Materials Science, 2024.
6. Hang Chen, Shuhui Zhang, Yuchuan Ma, Tianpeng Yang, Tingting Mi, Xiaowen Wang, and Chao Liu*, Ultra-wide bandgap Al0.5Ga0.5N vertical PN memory diodes. 15th International Conference on Nitride Semiconductors (ICNS-15), Malmö, Sweden, July 6-11, 2025.
7. Yuchuan Ma,Hang Chen, Shuhui Zhang, Xiangyu Teng, Xiaoping Meng, Huantao Duan, Bin Hu, Huimei Ma, Jianfei Shen, Minghua Zhu, Jin Rao, and Chao Liu*. 1500 V GaN-on-Si Vertical Power MOSFETs: from quasi-vertical to fully-vertical topology. International Symposium on Power Semiconductor Devices and ICs（ISPSD), Kumamoto, Japan, June 1-5, 2025
8. Shuhui Zhang, Hang Chen, Yuchuan Ma, Tianpeng Yang, Tingting Mi, Xiaowen Wang, and Chao Liu*, 1 kV Vertical Al0.51Ga0.49N Power Schottky Diodes. Applied Physics Letters, 2026.
9. Yuchuan Ma,Hang Chen, Shuhui Zhang, Huantao Duan, Bin Hu, Huimei Ma, Jianfei Shen, Minghua Zhu, Jin Rao and Chao Liu*. 1200 V Fully-vertical GaN-on-Si Power MOSFETs. IEEE Electron Device Letters, 2025
10. Yuchuan Ma,Hang Chen, Shuhui Zhang, Huantao Duan, Bin Hu, Huimei Ma, Jin Rao and Chao Liu*. Low Leakage Fully-Vertical GaN-on-Si power MOSFETs. Applied Physics Letters, 2025
陈航，男，工学博士，2025年获山东大学微电子学与固体电子学博士学位，同年入职南京邮电大学集成电路科学与工程学院。主要从事Ⅲ族氮化物功率器件及集成模块研究，聚焦GaN功率器件的外延生长、结构设计及先进制造技术。以第一作者在IEEE EDL、APL和ISPSD等国际权威期刊及顶级会议发表多篇论文，申请/授权多项国家发明专利。作为主要参与人完成的研究成果，获评2025年度山东省十大科技创新成果，山东好成果、济南好成果等奖项。现担任IEEE EDL、IEEE TED等期刊审稿人。曾参与国家重点研发计划青年科学家项目、广东省粤深联合重点项目等多项课题。
