近5年代表性SCI论文：
[1] Wang X, Ye S, Cui B, et al. Hafnium oxide-based nonvolatile ferroelectric memcapacitor array for high energy-efficiency neuromorphic computing[J]. Nano Energy, 2025: 111011.
[2] Wang X, Wu M, Zhang T, et al. Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films[J]. Applied Physics Letters, 2024, 124(23).
[3] Wang X, Cui B Y, Jing L, et al. Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor[J]. IEEE Transactions on Electron Devices, 2024, 71(4): 2404-2410.
[4] Wang X, Wu M, Cui B, et al. Oxygen Vacancy Modulation With TiO₂ Stack Interface Engineering for Ferroelectric Hf0.5Zr0.5O2 Thin Films[J]. IEEE Electron Device Letters, 2023, 45(1): 100-103.
[5] Wang X, Wen Y, Wu M, et al. Understanding the effect of top electrode on ferroelectricity in atomic layer deposited Hf0.5Zr0.5O2 thin films[J]. ACS Applied Materials & Interfaces, 2023, 15(12): 15657-15667.
[6] Wang X, Zhang M, Zhang L, et al. Inkjet-printed flexible sensors: From function materials, manufacture process, and applications perspective[J]. Materials Today Communications, 2022, 31: 103263.(被引180余次)
[7] Wang X, Mu B, Zhang L, et al. Drift characteristic analysis of additive manufactured Ag NPs-PEDOT: PSS flexible temperature sensor[J]. Results in Engineering, 2022, 13: 100384.
[8] Wang X, Xia J, Zou J, et al. Pathways toward precise monitoring and low-carbon sustainability in fruit cold chain logistics: A solution enabled by flexible temperature sensing[J]. Materials today sustainability, 2023, 24: 100592.
[9] Liu J, Wang X, Wu M, et al. Oxygen Vacancy-Zr Content Synergy for Morphotropic Phase Boundary Towards High-Performance DRAM Applications[C]. 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2025: 1-3.
[10] Cui B, Wang X, Li Y, et al. Back-end-of-line compatible HfO2/ZrO2 superlattice ferroelectric capacitor with high endurance and remnant polarization[J]. IEEE Electron Device Letters, 2023, 44(6): 1011-1014.
汪学沛，男，中共党员，工学博士。2025年获上海交通大学集成电路学院工学博士学位，同年加入南京邮电大学集成电路科学与工程学院。长期从事新型铪基铁电存储器件、神经形态计算、忆容器存算一体、柔性电子器件等研究。近年来在微电子器件领域权威期刊IEEE EDL、IEEE TED、ACS AMI、Nano Energy、APL等发表高水平SCI论文二十余篇。长期担任APL、Sensors and Actuators B等权威期刊的审稿人，申请并获得多项国家发明专利授权。与北京大学、上海交通大学、复旦大学、中国农业大学等高校建立了广泛的交流和合作基础。曾参与国家重点研发、国家自然科学基金、长鑫存储联合研发等多项科研课题。
